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Thermally assisted magnetic random access memory (TAS-MRAM) nanodevices are promising candidates for future memory applications, because they provide non-volatile data storage at fast operation and low energy consumption. In this work, we analyze operating regimes of these devices using macrospin and micromagnetic modeling. It is shown that, for the successful performance of write and read operations...
This paper describes the working principle of thermally assisted MRAM extending the downsize scalability of MRAM and introducing new functionalities particularly useful for security applications. Ultimately, STT switching assisted by thermally induced anisotropy reorientation can be used in MTJ with perpendicular magnetic anisotropy to obtain ultimate downsize scalability with reduced power consumption.
This paper describes an original concept of thermally assisted MRAM in which memory and logic functions are combined in the same stack. The memory cell is represented by a magnetic tunnel junction having an exchange biased storage layer and a soft reference layer (called sense layer), replacing the conventional pinned reference layer. The write of the storage layer is ensured by a combination of heating...
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