The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The hole mobility characteristics of 〈110〉 /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied. Uniaxial mechanical strain is applied to biaxial compressive strained devices and the relative change in effective hole mobility is measured. The channel Ge content varies from 0 to 100%. Up to -2.6% biaxial compressive strain is present in the channel and an additive uniaxial strain component...
Hole effective mobility and velocity have been extracted from measurements of sub-100 nm gate length strained Si0.45Ge0.55 channel MOSFETs. The hole effective mobility is observed to provide a 2.4x enhancement over Si hole universal mobility for channel lengths in the range of 200 to 80 nm. The extracted virtual source velocity is enhanced by 45% relative to Si control devices. These results are promising...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.