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A reliability proven high-K (HK) metal-insulator-metal (MiM) structure has been verified within the silicon interposer in a chip-on-wafer-on-substrate (CoWoS) packaging for heterogeneous system-level decoupling application. The HK dielectric has an equivalent oxide thickness (EOT) of 20Å, intrinsic TDDB lifetime of 322 years at an operation voltage (Vcc) of 1.8V, and a leakage current (ILK) below...
A low-cost and manufacturable 3D IC substrate-less Chip-on-Wafer (CoW) package has been studied. The new structure is a result of process simplification from the production-proven Chip on Wafer on Substrate (CoWoS™) technology. It features three layers of submicron (0.8µm pitch) Cu RDL on a Si interposer. High interposer yield is ensured with the excellent FAB-grade low defect density as demonstrated...
A 3D IC heterogeneous chip integration of 65nm RF receiver, 28nm baseband processor, and 40nm DRAM on a proprietary CoWoS structure is demonstrated and its electrical characterization of KGS (Known Good Stack) has revealed a highly comparable system performance as compared to that of the KGD (Known Good Die) testing data. Moreover, an innovative system BIST (Built-in-Self-Test) scheme and methodology...
A 3D IC heterogeneous chip integration of 65nm RF receiver, 28nm baseband processor, and 40nm DRAM on a proprietary CoWoS structure is demonstrated and its electrical characterization of KGS (Known Good Stack) has revealed a highly comparable system performance as compared to that of the KGD (Known Good Die) testing data. Moreover, an innovative system BIST (Built-in-Self-Test) scheme and methodology...
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