The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Sixteen GaN chips are mounted on one AlN substrate. There are three AlN substrate in one module. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are...
This paper described the electronic performance of power module packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate. Twelve GaN HEMTs chips are mounted on AlN substrate. Each device is wire-bonded in parallel connection to increase the power rating. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured with different connection and sizes...
This paper presents the packaging development of high power AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. Our packaging structure is designed on the device periphery surface for enhancing Si substrate thermal dissipation. The effects of structure design and fabrication processes on the device...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.