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This paper focuses on the design and experiments of Ge/SiGe QW waveguide modulators integrated on Ge-rich GeSi waveguide. This new photonic integration approach allows high bandwidth Ge-based active optical circuitry to be realized on bulk Si wafer at low temperature.
An eigenmode expansion method is used to model and optimize optical couplers between SOI waveguides and Ge/SiGe devices. Electroabsorption modulator performances are estimated in term of extinction ratio and insertion losses.
A novel type of semislow light photonic crystal waveguide obtained by shifting the boundaries of a W1 waveguide in the direction of light propagation is presented. The structure produces unusual "U-type" group index -frequency curves, which results in a nearly constant group index ng over large bandwidth. A versatile control of ng (11 <; ng 210) with large normalized delay-bandwidth products...
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