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Since recent mobile electronic devices have started to adopt NAND flash memory as their main data storage device, the demand for low cost and high density NAND flash memory has been rapidly increasing. As a promising candidate, nanowire SONOS NAND flash memory array has been introduced and reported for highly scalable device structure. However, since it is hard to bias floating body of memory cells,...
A novel SONOS Flash memory device, named as a cone-type SONOS memory, is fabricated and analyzed. The main idea of this structure is using a vertical cone-shape silicon channel to improve Flash memory characteristics. By taking advantage of the shape, a great electric-field concentration effect is made. Moreover, the structure has enhanced characteristics of suppressing back-tunneling current. As...
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