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Recently, minimizing the standby power is considered as a critical issue in high-density, mobile CMOS technology. One of the major sources of the leakage current in off-state of ultra-small MOSFET is gate-induced drain leakage (GIDL) which is mainly composed of inter-band and trap-assisted tunneling. By virtues of reduced intra-junction and punch-through leakage currents, threshold voltage controllability,...
A novel 2-bit recessed channel nonvolatile memory device is proposed in this paper. Physically separated two charge-trapping nodes are lifted up to achieve large sensing margin in highly scaled memory devices. A successful 2-bit/cell operation with effective suppression of second bit effect is achieved by adopting the lifted charge-trapping node scheme. In addition, the effect of the source/drain...
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