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The application of shallow trench isolation (STI) as trench capacitor is proposed in CMOS image sensor (CIS) to provide variable conversion gain. This provides higher sensitivity without degrading the dynamic range (DR) of the pixel. The proposed structure uses in-built isolation trenches as capacitors. In case of low light, trench capacitor (TC) is disconnected from the floating diffusion (FD) node...
This paper presents a first of its kind unique application of OxRAM devices in CMOS image sensor pixels. Our proposed hybrid CMOS-OxRAM pixel circuit exploits the non-linear capacitive and resistive properties of OxRAM device to control image overexposure autonomously. HfOx based OxRAM device is used as a programmable capacitive load in a conventional 4T-APS (active pixel sensor) circuit. Our solution...
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