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This paper describes the work heating power efficiency characteristics of a high frequency quasi-resonant inverter (QR-INV) and a normal resonant inverter (NR-INV) using power Metal Oxide Semiconductor Field Effect Transistor (MOSFETs), and also introduces a full-bridge type of QR-INV. The output frequency of NR-INV depends on resonant frequency in inverter load and cannot operate with variable frequency...
In this paper, the performance and experimental results of adjustable frequency and current high frequency quasi-resonant inverter is described. This inverter circuit includes the first resonant capacitor and that of the second resonant capacitor with one-way short-circuit switch and can output the variable frequency from 160kHz to 400kHz by using power Metal Oxide Semiconductor Field Effect Transistors...
In this paper, the frequency characteristics of a high frequency quasi-resonant inverter using power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as switching device is described. This inverter circuit includes the first resonant capacitor and that of the second resonant capacitor with a one-way short-circuit switch and can output the variable frequency from 160kHz to 400kHz by using...
In this paper, characteristics of a high frequency quasi-resonant multi-frequency output inverter using power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as switching devices is described. This inverter circuit includes the first resonant capacitor and the second resonant capacitor with a one-way short-circuit switch. Synthetic series capacitance is varied by manipulating the switch...
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