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We report on a new design of room-temperature terahertz quantum cascade lasers (THz QCLs) based on ZnMgSe/ZnSe material systems employing two-well design schemes with alternating quantum barrier heights and n-type delta-doping of the injector well. Our calculations show that this new THz QCLs achieves high optical gain at the emission frequency of 1.33 THz at room-temperature.
A new type of continuous-wave (CW) terahertz (THz) photomixer was fabricated using a nitrogen-doped single layer graphene (N+SLG) powder and silver nanowire (Ag-NW of Ø 300 nm) on low-temperature-grown (LTG) GaAs. The new hybrid (N+SLG/Ag-NW) structure provides simple fabrication steps and better performance in terms of high current handling together with reliable operation. The THz output power itself...
Continuous-wave (CW) terahertz (THz) photomixers are fabricated using 1-D nanocontacts on low-temperature-grown (LTG) GaAs and InGaAs, for operation wavelengths of 850 nm and 1550 nm, respectively. Silver (Ag) nanowire (NW) used as the nanocontact is aligned between the antennas patterned onto these photoconductive material by dielectrophoresis (DEP) technique. Reliable photocurrent measurements for...
We present new kind of terahertz (THz) Schottky detectors based on high-doped GaAs and AlGaAs/GaAs high electron mobility transistor (HEMT) structure using silver (Ag) metallic nanowires (NWs) with different diameters as air-bridge contact between the antenna and Schottky anode. The dielectrophoresis allows a simple alignment of the NWs and fabrication of submicron anode contacts with high cut-off...
A new type of a fully integrated vertical nanocontact THz photomixer was fabricated on LTG-GaAs/n+GaAs /SI-GaAs wafer with a single silver nanowire of 60nm. The new vertical structure provides simple fabrication steps and better performance in terms of stability and antenna integration. The THz output power itself can be increased due to high photocur-rent of ∼7.5mA and small device capacitance of...
New types of continuous-wave (CW) terahertz (THz) photomixers were fabricated using 1-D and 2-D nanocontacts on low-temperature-grown (LTG) GaAs as well as nitrogen-ion-implanted GaAs. The 1-D and 2-D nanocontacts were formed by silver nanowires and graphene sheets, respectively. A silver nanowire (Ag-NW) with a physical diameter of and ...
A new type of continuous-wave (CW) terahertz (THz) photomixer was fabricated using a single nanowire (Ø 120 nm) on low-temperature-grown (LTG) GaAs. The small diameter of the nanowire reduces the device capacitance by a factor of more than 10 compared to photomixers with conventional interdigital fingers. Furthermore, the single nanowire can handle currents > 20 mA without electromigration enabling...
A new type of continuous-wave (CW) terahertz (THz) emitter was fabricated using multilayer graphene (MLG) electrodes on LTG-GaAs photomixer instead of metal electrodes. Unique graphene properties allow high optical power illumination for high photocurrent generation and show the potential for reliable CW THz emission.
This work proposes a new type of continuous-wave (CW) terahertz (THz) generation based on vertically integrated LTG-GaAs photomixer and Nanogrid-based transparent top bias-electrode. The THz output power can be increased by higher available photocurrents and smaller device capacitances. A suitable resonant antenna design is proposed.
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