The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Samples investigated in this work contain Hf-doped layers of Ta2O5, i.e. the mixture of two most favorable high-k materials, which proved appropriate characteristics for application in DRAMs and MOSFETs. The influence of the top electrode material, with different work functions, on the electrical properties of MIS structures is of particular interest and was studied in this work. Here we confirmed...