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The ability to rapidly detect both printable EUV mask adder defects as well as mask absorber defects across the entire mask image field is a key enabler for EUV lithography. Current optical wafer-based inspection techniques are only capable of detecting repeater defects on a Die-to-Die basis for chiplets within the image field. Larger server-type chips that encompass the entire mask image field cannot...
A Critical Dimension-Scanning Electron Microscopy (CD-SEM) technique for determination of both the CD width and the local overlay between individual pitch split layer 1 and layer 2 is employed for measurement on electrical device test structures and nearby in-die metrology sites. Measured overlay correlation studies by varying radial distances of in-die overlay metrology sites to the electrical test...
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