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We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 to 200 . A variety of test structures...
We present the extension of a method for determining the temperature budget of the process side of silicon substrates and chips, employing silicide formation reactions. In this work, silicon-on-insulator type substrates are used instead of bulk silicon wafers. By an appropriate choice of the layer thicknesses of SOI and metal, lateral silicidation can be enforced. Using this principle, test structures...
Temperature is a crucial parameter in many planar technology processing steps. However, the determination of the actual temperature history at the device side of the substrate is not straightforward. We present a novel method for determining the temperature history of the process side of silicon wafers and chips, which is based on well-known silicide formation reactions of metal-Si systems and is...
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