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In this paper, we propose the integration of an Al2O3/CuTex based Conductive Bridge RAM (CBRAM) device in vertical configuration. The performances of the memory devices are evaluated. 20ns switching time, up to 106 cycles and stable 150°C retention were demonstrated. Functionality is compared with Vertical RRAM integrating an HfO2/Ti OXRAM stack, showing the pros and cons of each configuration. Then...
Combining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1]. 3D RRAM based neural networks were also proposed to emulate the potentiation and depression of a synapse [2], but more complex circuits were not discussed. In previous works [3-4], various...
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