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In this paper, an analytical model of a fully depleted nanoscale dual- material gate (DMG) SON MOSFET has been developed and performance comparison is made with SMG SON MOSFET. A 2D Poisson's solution based generalized threshold voltage model has been developed. It is found that the introduction of the DMG structure in a fully depleted SON MOSFET leads to subdued SCEs due to a step-function in the...