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Low temperature (≤450°C) ion beam deposition was employed to grow polycrystalline Germanium (Ge) films on Si (100) crystal, polymer film, and glass. The effects of deposition temperatures and energies of sputtered atoms on the crystal quality of Ge films were studied. XRD characterization of the material showed that at above 300°C, Ge films had a phase transition from amorphous to polycrystalline...
The simulation and fabrication of a multi-period GaAs n-type / intrinsic / p-type / intrinsic (nipi) doping superlattice solar cell has been demonstrated. A fabrication procedure has been developed using regrown contacts in wet etched V-grooves. Devices have been fabricated and characterized. Current-Voltage measurements in the dark and under one sun AM0 illumination were taken both experimentally...
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