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A power-combining structure at -band is proposed. The proposed structure, consisted of a multisection of Marchand baluns in series configuration, combines multiple pairs of balanced signals into a single unbalanced port. The active devices, in a differential cross-coupled pair configuration, are then combined with the multibalun structure forming the CMOS multiple element oscillator. The power-combining...
This paper presents a monolithic transmission-line-based double-mode active bandstop filter (BSF) fabricated in a standard 0.13-μm complementary metal-oxide-semiconductor (CMOS) technology. The proposed filter comprises an E-shaped double-mode resonator which is implemented with synthetic quasi-TEM transmission lines. The area of the proposed X-Band active BSF is 510 μm × 570 μm, in the dimension...
A narrow band active dual-mode bandstop filter fabricated on complementary metal-oxide semiconductor (CMOS) 0.13 μm process is proposed in this paper. In the design, a ring resonator is coupled to a main signal path through a quarter-wavelength length coupled line. Meandered complementary conducting strip transmission lines (CCS TLs) are used to form the ring resonator. The ring resonator is loaded...
An on-chip Frequency-Selective-Surface (FSS) integrated with a Proportional-to-Absolute-Temperature (PTAT) circuit for detecting infrared wave in CMOS process is presented. The slot-type FSSs with different slot length reveal different transmission properties. The power absorbed by the chip is analyzed by electromagnetic and thermal simulation software. The measurement results at 28.3 THz show good...
For the design of the guiding properties of the synthetic transmission line so-called complementary-conducting-strip transmission lines (CCS TLs), full wave simulation tools are used. The characteristic impedance of the CCS TL is obtained from the scattering parameters generated by the simulation tools with considerable computational time. In this paper, the fuzzy neural network is used for helping...
A high-efficiency stacked-film infrared absorber comprising a Jerusalem-cross slot frequency-selective surface (FSS) and Si-based dielectric layers fabricated in foundry CMOS process is proposed. Simulation shows that integration of proposed FSSs with dielectric layers can improve the absorption of the dielectric layers in infrared. A temperature sensing circuit is integrated in CMOS chip to measure...
This paper presents a fully monolithic approach to the design and fabrication of THz CMOS image sensor operating at 28.3 THz using the mass-producible 0.18-μm 1P6M CMOS foundry. The CMOS sensor consists of antenna-coupled transducer, linearly transforming the intercepted THz (terahertz) electromagnetic energy into voltage representation in the region of interest. The THz image sensor adopts PTAT (Proportional...
This paper presents the measured results of the distributed thermal image of a 28.3 THz CMOS thermal detector of area 65 um * 45 um, consisting of antenna, thermal-coupling and thermal sensing circuit elements integrated monolithically. In contrast to the conventional THz thermal detectors, the proposed detector design shows subtle temperature distribution profile of the CMOS detector, leading to...
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