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The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the...
We use a triangular-pulse measurement technique to obtain the hysteretic electrical characteristics of flexible graphene field-effect transistors (GFETs). To minimize charge trapping, the gate-voltage scanning rate was controlled (up to 2 ) by varying the triangular-pulse rise and fall times. This method makes it possible to measure the intrinsic-like transfer characteristics of...
In this article we demonstrate the use of an ozone based functionalization scheme of graphene surface for depositing thin, high-k dielectrics using atomic-layer deposition (ALD) technique. It is found that the ozone functionalization at room temperature provides nucleation sites for atomic layer deposition without causing any substantial damage to the electronic properties of graphene devices. The...
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