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A comprehensive study of HC reliability and process change variation for submicron fully depleted Silicon On Insulator (FDSOI) MOSFET's is presented. The different process variation within the FDSOI technology and their impact on HC degradation are examined (i.e. channel length L, Source/Drain resistance RSD, oxide thickness Tox, lightly-doped drain LDD). In order to prove its consistence, our energy...
With technology scaling, highly integrated devices have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent technologies is the Hot Carrier Injections (HCI), a progressive wear out phenomenon whose understanding and modeling has become mandatory in new CMOS nodes. Therefore, we present in this paper an experimental analysis of HCI...
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