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Turn-on transient drain current in polycrystalline silicon thin-film transistors is investigated. We consider two mechanisms responsible for causing the overshoot current, i.e., the carrier trap effect (CTE) and the self-heating effect (SHE). Under low drain bias, current decay is described by the power-law relaxation indicating CTE. Meanwhile, when input power is increased, the overshoot component...
Characteristics of transient drain current overshoot in poly-Si TFTs are measured, and an equivalent thermal circuit model is proposed based on the experimental results. By changing the terminals on which a step voltage is applied, two main mechanisms causing the transient current, i.e., the electron trapping effect and the self-heating effect, can be separately evaluated. Using this new technique,...
Characteristics of transient drain current overshoot in poly-Si TFTs are measured, and the physical mechanisms behind the observed results are discussed. By changing the terminals on which the step voltage is applied, two main mechanisms causing the transient current, i.e., the electron trapping effect and the self-heating effect, can be separately evaluated. Using this technique, the bias and geometrical...
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