The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An analytical model for short-channel triple-gate junctionless MOSFETs in the full operation regimes has been presented based on the solution of 3-D Poisson’s equation. A separation approach is developed to solve 3-D Poisson’s equation, and the contribution of the fixed and mobile charges can be considered separately. Besides, a fitting parameter $\beta _{f}$ is introduced to characterize the coupling...
Traditional BSIM MOSFET model extraction considers I-V/C-V curve fitting to capture DC non-linearity and S-parameter fitting to capture high-frequency small-signal behavior. This leads to poor accuracy when modeling MOSFETs in large-signal RF circuits such as power amplifiers, which require to model high-frequency large-signal behavior of MOSFETs. In this paper, we proposed an automatic method for...
With the continuous shrinking of feature size, various effects due to shallow-trench-isolation (STI) stress are becoming more and more significant. The resulting nonuniform distribution of stress affects the MOSFET characteristics and hence changes the circuit behavior. This paper proposes a complete flow to characterize the influence of STI stress on performance of RF/analog circuits based on layout...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.