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In this paper, fabrication of (110) oriented ultra-thin GOI substrates by using Ge condensation method is demonstrated. An initial structure of Si/Si0.7Ge0.3/ (110) SOI layers was fabricated by MBE and, high temperature oxidation was carried out to form (110) oriented pure GOI structures. The resultant thickens of GOI layer was confirmed to be 12 nm. The surface orientation was confirmed to be the...
SiGe on insulator (SGOI) is a typical template substrate for strained Si-on-insulator (SOI) structures, which can enjoy both benefits of the mobility enhancement by strained channels and the low junction capacitance by SOI structures. In order to fabricate the high performance MOSFET, formation of the highly strained Si layers on SGOI without dislocations and defects is quite important. This means...
An ultra-thin body (UTB) Ge-on-insulator (GOI) MISFET is one of the promising candidates for the future devices structure. For fabrication of UTB GOI devices, we have fabricated an ultra-thin GOI layer by oxidizing a SiGe layer grown on an SOI layer, which is called the Ge-condensation technique, However, the GOI devices on substrates fabricated by Ge condensation exhibited large off current which...
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