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CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performance and low power advanced LSIs in the future. In addition, the heterogeneous integration of these materials with Si can provide a variety of More-than-Moore and Beyond CMOS applications, where various III-V/Ge functional devices can be co-integrated. In this presentation, we review...
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performance and low power advanced LSIs in the future. In addition, the heterogeneous integration of these materials on the Si platform can provide a variety of applications from high speed logic CMOS to versatile SoC chips, where various functional devices can be co-integrated. In this presentation,...
We propose a novel formation process of a Ge nitride interfacial layer (NIL) and demonstrate successful Ge-nMISFETs operation with NIL, for the first time. We also examine the impact of NIL on the performance of the nMISFETs. It is found that, compared to an oxide interfacial layer (OIL), NIL is quite effective in suppressing the generation of positive fixed charges and electron trapping centers in...
We have found that GeO2/Ge MOS structures fabricated by direct thermal oxidation yield significantly low interface trap density (Dit). Thus, Ge pMOSFETs using the GeO2/Ge MOS structures with the superior interface properties have been fabricated for achieving high hole mobility and investigated for examining the impact of the interface properties on the device performance. Al2O3 or SiO films were...
Ge photodetectors and Ge MOSFETs were integrated on Ge-on-Insulator substrate by using oxidation condensation technique. The responsivity of photodetectors up to 1575 nm and excellent switching of MOSFETs were demonstrated.
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