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With substantial progress in Internet of things (IoT), new challenges of EMI on IoT (IoT-EMI) measurement have emerged. The IoT-EMI behaviors are complex and dependent on the target's interactions between hardware and software. A systematic method for IoT-EMI measurement should be developed. However, the characteristics of IoT-EMI are digitally-controlled, time-varying, and software-dependent and...
GaN nanorod formation on Ga‐polar GaN by continuous mode metalorganic chemical vapor deposition selective area growth (MOCVD SAG) is achieved under a relatively Ga‐rich condition. The Ga‐rich condition, provided by applying a very low V/III ratio, alters the growth rates of various planes of the defined nanostructure by increasing relative growth rate of the semi‐polar tilted m‐plane {1–101} that...
This paper proposes a method which can find dynamic characteristics of internal impedance (IntZ) and internal current activity (IntCA) in a microcontroller (uC) for IC-EMC model. The dynamics of IntZ/IntCA can be estimated without any prior netlist information. The dynamics of IntZ/IntCA are represented by a set of internal “impulse response” functions. This paper shows that both of the IntZ and IntCA...
GaN nanorods have drawn attention as possible crystalline structures on which to form InGaN active regions for LEDs, making use of the m-planes that form the sidewalls of the rods. In this paper, we describe such nanorods as well as nanosheets with increased m-plane surface area formed on c-plane sapphire. Non polar crystalline planes on nanorods and nanosheets are expected to lead to more efficient...
GaN nanorod arrays are grown by selective area growth. The exposed nonpolar planes of the nanostructures can be utilized as a potential solution to improve the efficiency of light emitting diodes.
InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe...
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