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Ballisticity in 14nm-node FinFETs is investigated by Monte Carlo device simulation. Analytic doping profiles are reverse-engineered to measured transfer characteristics of FinFETs from literature and from this work and good agreement between Monte Carlo simulations and measurements is achieved without any device-parameter calibration. The ballistic ratio, defined as the ratio of the on-current with...
In its standard formulation the drift-diffusion (DD) model frame cannot describe the influence of the ballistic resistance on the device characteristics. This results in considerable problems in calibrating the short channel behavior of advanced devices. In this paper, we propose a new formulation for the inclusion of the ballistic resistance into the DD model frame consisting in adding a simple ballistic...
InGaAs devices are candidates to replace Si devices in future technology nodes due to their promising transport properties. Recently, CMOS-compatiple replacement metal gate (RMG) InGaAs-on-insulator (InGaAs-OI) FinFETs with record performance have been reported [1]. Further optimization and identification of limiting factors by TCAD simulation requires calibration and validation of the underlying...
Full—band Monte Carlo simulations are performed for n—type FinFETs as well as for unstrained—Si and strained—Si fully—depleted (FD) SOI-MOSFETs. Gate lengths of 50 nm down to 10 nm are considered, and a fixed off—current of 100 nA/μzm is in each case ensured by adjusting the silicon film thickness. The FinFET shows the best scaling trend, but the strained-Si FDSOI-MOSFET always involves the largest...
The stress and orientation dependence of FinFET performance is studied by parallelized 3D Monte Carlo (MC) device simulation. The long-channel mobility for holes in devices with (110)/(110) sidewall/channel orientation was found to double relative to the (100)/(100) configuration; electron mobility decreased by 20%. This agrees with recent measurements. In 15nm-FinFETs quasi-ballistic velocity overshoot...
Long-channel effective mobilities as well as transfer characteristics of a 32 nm single-gate SOI and a 16 nm double-gate (DG) MOSFET have been simulated with live different Monte Carlo (MC) device simulators. The differences are mostly rather small for the SOI-FET with quantum effects having a minor effect on threshold voltage due to the lowly doped channel, while the two multi-subband MC simulators...
It is demonstrated that the gate interface breaks the equivalence between vertical and transverse direction for the mobility in 〈100〉/(001) pMOSFETs, leading to 6 instead of 3 independent 1st order piezoconductance coefficients. This is found from Monte Carlo (MC) simulations yielding different effective mobilities for uniaxial vertical and transverse stress, which can be explained in terms of energy...
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