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A simple and effective method to control the growth of carbon nanotubes (CNTs) by introducing 0-dimensional silica particles has been proposed and demonstrated. After being processed with dip-coating and self-assembly of the specific silica nanoparticles, the substrate surface with nano-scale morphology was obtained, and which helped to control the diameters and density during the CNTs growth in a...
In this letter, a silicon-embedded receiving coil is designed and fabricated for high-efficiency wireless power transfer to implantable biomedical ICs. The 4.5 mm 4.5 mm embedded receiving coil achieved a large inductance of 4 and a high peak quality factor of 20 at 2.8 MHz. Measurement results of an inductive power link using the embedded receiving coil and a conventional printed-circuit-board...
An experimental investigation on oxide positive charge buildup in sub 3-nm silicon dioxide (SiO2) films is presented during direct tunneling (DT) of electrons at -1.8 V of gate bias. The measurement results can be best explained by hole generation via anode hole injection (AHI) mechanism and the subsequent trapping of holes in the as-fabricated neutral hole traps in the oxide. A comparative study...
Electrical characteristics of hafnium oxide (HfO2)/silicon dioxide (SiO2) gate dielectric stack during both constant voltage stress (CVS) and constant current stress (CCS) have been experimentally investigated with varying thickness of the HfO2 layer. The generation kinetics of bulk, interface and border trapped charges have been discussed showing a correlation among them. Nature of intrinsic hole...
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