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The higher effective barrier height of Dy2O3 , which is around 2.32 eV calculated from the Fowler-Nordheim plot, accounts for the reduced leakage current in Dy-incorporated HfO2 n-type metal-oxide-semiconductor devices. The lower barrier height of HfO2 characterizes the increasing electron-tunneling currents enhanced by the buildup of hole charges trapped in oxide, which causes a severe increase in...
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