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We reported transport characterization on [112̅0]GaN single nanowire (SNW)-MOSFET laterally- and directionally-grown on (0001) sapphire substrates. The 60nm-dia. Ga2O3/GaN SNW-MOSFET of 0.1μm gate length was shown to exhibit a saturation current of 160μA, current on/off ratio of 105, swing of 85mV/dec, transconductance of 85μS, and unity current gain bandwidth ft at 95GHz. From a 3D diffusion and...
We reported high-speed transport properties on gallium nitride (GaN) single nanowire (NW) transistors laterally grown on the (0001) sapphire substrates. Due to the preservation of surface stoichiometry and passivation effects by the facet growth of [112̅0]Ga2O3/GaN, the 60nm-dia. SNW-MOSFET device of 0.2μm gate length was shown to exhibit a saturation current of 145μA, current on/off ratio of 105,...
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