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This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same...
This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same...
Interest in resorbable and biodegradable materials originates from their potential in food packaging, environmental science and ecology, but also in medicine and biotechnology. Till very recently, electronics has not been on such development paths. However, recent advancements in material science, thin processing and nanotechnology offer the prospective of high performance electronic devices which...
Epidermal sensors, which form an intimate and robust contact with the skin, are capable of providing clinically relevant information about cardiovascular health, electrophysiology and dermatology with high accuracy and in an unobtrusive manner. To enable clinical applications, however, continuous and long-term monitoring is necessary. In addition, wireless and energetically autonomous systems are...
In this chapter, we review some of the most recent results in these areas and put them in a unified context that covers a very wide range, from materials to system design. The first section presents a top-down silicon nanowire fabrication platform for high-mobility gate-all-around (GAA) MOSFETs and impact-ionization devices. Ferroelectric FET with sub-100-nm copolymer P(VDF-TrFE) gate dielectric are...
This work presents an innovative bendable module for solar-energy harvesting. The module consists of a mechanically flexible organic photovoltaic device (OPV), a rechargeable battery, and an a-IGZO TFT charge-control circuit. The total thickness of the module is 1.1 mm. We present measurements of hardware implementations and simulations. On this basis, voltage converter schemes based on a charge pump...
This paper presents an operational amplifier based on pseudo-CMOS blocks and integrated in a flexible a-IGZO TFT technology. The circuit consists of only nMOS transistors, and the pair of active loads is in a pseudo-CMOS configuration. These active loads allow various kinds of common mode feedback schemes or cross-coupled connection, typical for CMOS operational amplifiers. The proposed amplifier...
Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We...
TFTs on flexible plastic foils have the potential to enable new applications like electronic skins or smart textiles. Due to the temperature sensitivity of plastic substrates, amorphous In-Ga-Zn-O (a-IGZO) is a promising semiconductor since it provides a carrier mobility >10 cm2/Vs when deposited at room temperature. Therefore, a-IGZO TFTs have significantly increased electrical performance compared...
This paper provides an overview of the research activities within the frame of the European project FLEXIBILITY. The project aims at advancing the competitiveness of Europe in the area of multifunctional, ultra-lightweight, ultra-thin, bendable organic and large area electronics (OLAE). An overview of the technologies available to the consortium is provided, together with details of the performance...
In this paper, the concept of double gate transistors is applied to mechanically flexible amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) fabricated on free standing plastic foils. Due to the temperature sensitivity of the plastic substrate, a-IGZO is a suitable semiconductor since it provides carrier mobilities of ∼ 10 cm2/Vs when deposited at room temperature. Double gate...
In this paper we report the fabrication and detailed electrical characterization of a novel test structure based on Metal-Ferroelectric-Oxide-Semiconductor transistor with internal metal contact, aiming at extracting the surface potential and the investigation of internal voltage amplification expected due to negative capacitance effect. The proposed test structure is p-Fe-FET with a thin Al contact...
Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study is based on thin film SOI Fe-FETs using organic ferroelectric gate stacks (45 nm P(VDF-TrFE) 70%-30% layer on top of 10 nm thermal SiO2). The device...
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