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This paper describes a linear, high efficient, high power push-pull GaN amplifier in the VHF-UHF band. This PA shows an efficiency of 60–55% from 10 MHz to 650 MHz, for an output power of 100W and a compressed gain of 19,5 +/-1.5 dB. By reducing the drain voltage to 30V, the efficiency is 70-60 with an output power of 47 dBm and a power gain of 18,5 +/-1.5 dB. Moreover, the measured EVM is less than...
This paper describes a linear, high efficient, high power push-pull GaN amplifier in the VHF-UHF band. This PA shows an efficiency of 60–55% from 10 MHz to 650 MHz, for an output power of 100W and a compressed gain of 19,5 +/−1.5 dB. By reducing the drain voltage to 30V, the efficiency is 70–60 with an output power of 47 dBm and a power gain of 18,5 +/−1.5 dB. Moreover, the measured EVM is less than...
This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in communication systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain...
This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain load...
This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and...
This paper presents a method for synthesizing the package of power GaN transistors in order to achieve wideband matching at harmonics. The proposed method is applied to optimize the package of a 15W power GaN HEMT for high efficiency performance over 39% bandwidth (S-band). It is demonstrated that the internal pre-matching of package ensures that the impedance seen by the GaN die at the second-harmonic...
This paper describes a new methodology of wideband and highly efficient design with packaged transistors using behavioral model in CAD software. The Multi-Harmonic Volterra (MHV) model of a 10W GaN transistor has been extracted from Time domain Load-Pull measurements, and has been implemented into CAD software for the design procedure. The designed power amplifier exhibits, in measurement, a drain...
This paper presents a method for synthesizing the package of power GaN transistors in order to achieve wideband matching at harmonics. The proposed method is applied to optimize the package of a 15W power GaN HEMT for high efficiency performance over 39% bandwidth (S-band). It is demonstrated that the internal pre-matching of package ensures that the impedance seen by the GaN die at the second-harmonic...
This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) or packaged transistors used in communication systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. The model results on a Multi-harmonics Bilateral model which handles short-term memory effects...
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