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The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded-gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor...
The usage of graded-gap semiconductors can increase the efficiency and output power of Gunn generators. The energy gap between the valleys in InBN and GaBN compounds, unlike other ternary semiconductor nitrides, can be reduced to zero. This gives the opportunity to find the optimal distribution of the BN component in graded gap compounds for Gunn diodes. In this paper we present the results of numerical...
The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN, GaInN and BInN. We had obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap...
Dependence of resonance frequency of current oscillations generated by Gunn diodes (TED) on the basis of graded gap semiconductors on length of the graded gap layer (lV), active region length (lа) and the voltage (U) applied to the diode is determined. The studies have been carried out using three-level model of intervalley electron transfer (IET) in the graded gap semiconductor.
We have obtained output characteristics of graded-gap AlInN diodes with different cathode contacts in a wide range of frequencies (fig. 1, table 1). The graded-gap AlInN TEDs can effectively operate in the microwave frequency generation mode up to 0.9 ÷ 1.3 THz. For similar InN-diodes the frequency limit is 0.7 ÷ 0.8 THz. Optimal length of the graded-gap AlInN layer, depending on the active region...
We have used a numerical method for analyzing the space-change wave in a graded-gap InBN diodes. We have obtained the output characteristics of graded-gap InBN Gunn diodes with different BN contents binary components in a diode is found. The graded-gap InBN Gunn diodes are shown to offer greater efficiency in oscillation and output power as againet the InN and graded-gap AlInN diodes.
The results of researches of power characteristics for Gunn-diode on the base of the alloy variband semiconductor GaN-InN with different active lengths in the biharmonic mode are presented. The influence of the region between GaN and InN length, cathodes contact and frequency on the diodes efficiency is studied. The possibility of efficient operation for Gunn diodes on the second harmonic in terahertz's...
Hydration number of molecules of oxyethylated glycerol (OEG) of polymerization degree n = 5, 25 and 30 has been determined by infrared spectroscopy method. According to the experimental results, an OEGn=5 molecule is able to bind with about 20 water molecules, an OEGn=25 molecule is able to bind with about 75 water molecules, and an OEGn=30 molecule is able to bind with about 90 water molecules.
The frequency and power capabilities of the nitride semiconductor-A3B5-based Gunn diodes are evaluated using a temperature model of the intervalley electron transfer. Prospects, problems and characteristics of the nitride semiconductors in TED's for the harmonic and biharmonic modes are discussed.
The influence of spatial inhomogeneity of different physical parameters of variband semiconductors on origination of inconsistences in Gunn diodes is investigated. Presence of special effects in Gunn diodes on the basis of variband semiconductors is proved. These effects do not exist in diodes on the basis of homogeneous semiconductors. These effects allow increasing of efficiency and oscillation...
Two-level, displaced-maxwellian approach model of transfer electron effect in variband semiconductors has been created. With the help of the model research of TED based on variband semiconductor compounds Inx(z)Ga1−x(z)As, Alx(z)As, InP1−x(z)Ga1−x(z)Asx(z) has been done. Composition of the semiconductors x(z) in the active zone of TED depends linearly on the coordinate. It has been proved...
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