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We propose a column-based split cell-VSS (CS-CVSS) data-aware write-assisted (DAW A) 9T ultra-low voltage SRAM with enhanced read sensing margin in 28nm FDSOI technology. The proposed write-assist technique (CS-CVSS and DAWA) improve both half-select SNM and write margin. The proposed 3T low leakage read port enhances read sensing margin by minimizing bitline leakage through negative gate to source...
This paper presents circuit techniques that support on-chip SRAM dynamic reliability management to prevent half-selected cell stability failure due to Bias Temperature Instability (BTI) degradation. The proposed techniques monitor the BTI degradation in SRAM cells through a replica row and adjust the WWL voltage level with the assist of a two-phase write operation, where the WWL voltage level is divided...
In this paper we present reaction-diffusion based two eye model to develop disparity selective binocular simple cell receptive fields (RFs) in layer IV of cat visual cortex (V1). Pre-eye opening environment is used for development of binocular simple cell RFs. Our model also supports post-eye opening period development of binocular simple cell RFs. Developed binocular simple cells, left and right...
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