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A highly sensitive temperature sensor based on a side-hole fiber filled with indium was proposed and its optical characteristics were experimentally demonstrated. The temperature sensitivity of the sensor was estimated to be dλ/dT=−7.5 nm/°C.
Optical absorption and photoluminescence properties of the borosilicate glasses containing bismuth were investigated. The visible light emission near 655nm was obtained by excitation with the high power xenon lamp at 450 nm. Absorption appeared at 500 and 700nm and photoluminescence were found to decrease with the increase of bismuth content.
A prototype of silicon array sensor with 256 pixels and a frontend electronics system for its readout was developed for X-ray imaging. The characteristics of the sensor and some test results of the electronics system are presented.
We designed and fabricated silicon PIN diodes having p+ active area of 1.0 cm × 1.0 cm on a 5-in. high resistivity (≫5 kΩ⋅cm) n-type FZ (float zone), 380 μm-thick silicon wafer. For signal-to-noise ratio (SNR) measurement of the diode, we required that the fabricated diode should be fully depleted at the operation voltage and the level of the leakage current of the sensor should be less than 10 nA/cm...
Silicon PIN diodes with an active area of 1 cm × 1 cm were fabricated on a high resistivity, (100)-oriented, n-type, 380-μm thick and 5-inch silicon wafer. These diodes were originally fabricated on purpose to monitor strip sensor fabrication processes. To evaluate the performance of the silicon PIN diode, we measured the signal-to-noise ratio (SNR) and energy resolution using radioactive sources...
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