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High power diode lasers have been widely used in pumping solid state lasers and double-cladding fiber lasers etc. Beam and spectrum improvement is now the major consideration for high power diode laser technology. Asymmetric Broad waveguide structure, tapered broad stripe and compact VBG external cavity have been designed for improving slope efficiency, lateral beam quality and spectrum characteristics...
To obtain a stable passivation layer with high performance, we use the highly alkaline hydrazine solution to passivate GaAs (100) surface, the native oxidation layer has been effectively removed. The PL intensity was found higher than that of the untreated sample, no obvious PL-intensity degradation was observed during a long period exposure to air.
Post-growth energy band gap turning of the 980nm high power semiconductor laser structure through the quantum well intermixing (QWI) has been investigated. The QWI was carried out by depositing a thin film of SiO2 on top surface of the laser structure samples and followed by high temperature annealing. By using the QWI technique, band gap energy of the 980nm quantum well structure has been blue shifted...
Quantum well (QW) inter-mixing based post-growth energy band gap turning of 980nm InGaAs/InGaAsP QW-structures for high power semi-conductor lasers has been investigated. The QW intermixing was carried out by depositing SiO 2 thin film on the samples and followed by high temperature annealing. The band gap energy blue shift of the QWs after the intermixing under various conditions has been...
By means of extension method, a new qualitative and quantitative evaluation technique is established to evaluate synthetic benefit evaluation of enterprises. The model obtains the index weight using incidence function and computes the incidence degree and adopts the optimal degree evaluation approach. A demonstration is applied to illustrate and validate advantages of the method. The result indicates...
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