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Electron and hole mobility in sub-10nm silicon nanowire FETs on (100) SOI has been systematically investigated experimentally. The nanowire height of fabricated nanowire FETs is as low as 4 - 10nm and the minimum nanowire width is shrunk to 5nm. Higher hole mobility than (100) universal mobility is experimentally observed for the first time in 9nm-wide nanowire and even in 5nm-wide nanowire, while...
Systematic study has been performed on carrier mobility in sub-10nm gate-all-around (GAA) Si nanowire (NW) FETs on (100) SOI. The NW height is 4 - 10nm and the minimum NW width is shrunk to 5nm. For the first time, higher hole mobility than universal mobility is experimentally observed in 9nm-wide NW and even in 5nm-wide NW, demonstrating great advantage of NW pFETs, while electron mobility degradation...
Nanowire (NW) MOSFETs, as one promising candidate for future VLSI, have attracted much more attention. In conclusion, investigations on the uniaxial stress effects in (110)-oriented NWs nFETs have been described for the first time. On-current and electron mobility enhancements by longitude tensile stress are experimentally observed in both [110]and [100]-NWs. Wherein, [110]-NWs are much more sensitive...
Investigations on electron mobility characteristics in gate-all-around silicon nanowire nMOSFETs on (110)-oriented silicon-on-insulator substrates have been described on the basis of the advanced split capacitance-voltage (C- V) method. It is found that the electron mobility in [110]-directed nanowires approaches and is even higher than that in [100]-directed nanowires as the nanowire width is reduced...
For the first time, electron mobility characteristics in Si nanowires (NWs) on (110)-orientated SOI have been measured directly by split C-V method based on fabricated multiple NW gate-all-around (GAA) nMOSFETs. It is found that electron mobility in [110]-directed (110) nanowires approaches to and is even higher than that in [100]-directed (110) nanowires. Also, physical mechanisms that dominate mobility...
Experimental investigations of silicon nanowire mobility characteristics on (100) SOI as shrinking nanowire width to sub-10 nm are reported. Accurate mobility estimations by advanced split CV method for 50~1000 nanowires are performed. For the first time, electron and hole mobility in [100]-directed nanowires are studied and compared with [110] nanowires. It is shown that both electron and hole mobility...
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