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Sputter-deposited amorphous zinc–tin–silicon–oxide (ZTSO) is demonstrated to be a viable electronic passivation layer for bottom-gate thin-film transistors (TFTs) with amorphous zinc–tin–oxide and indium–gallium–zinc–oxide channels. ZTSO allows for successful passivation of these semiconductors without significant changes in turn-on voltage, hysteresis, or channel mobility that is commonly associated...
In oxide-based thin films transistors (TFTs) there have been many devices reported with non-negligible output conductance. It has been proposed that the origin of the output conductance may be similar to for short channel Si MOSFETs. However, for these and the vast-majority of published oxide TFTs the channel length is more than 30x longer than the gate oxide thickness, and short channel effect are...
This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectrics studied in this...
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