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The RTB planar diode shows a negative active impedance component ( ReZ < 0 ) in the range of wide frequencies. Frequencies corresponding to ReZ → 0 for analyzed microstructures ( when S ∼ 10−6 cm2), remain within the range up to 100 … 300 GHz.
Operation principles of diodes with lateral borders which possess difference mobility have been described earlier [1–3]. Lateral borders can be represented by tunnel border (TB), resonant-tunnel border (RTB), heteroborder (HB), etc. Diodes with lateral boundaries can be fabricated in a “sandwich” structure, based on n-type semiconductor grown on heavily doped n+ - substrate, or in a planar structure...
The results obtained from simulating GaN-based intervalley-electron transfer diodes having different types of cathode contacts (ohmic, metallic, with a lower-concentration region). The main-particle Monte Carlo method was used to analyze electron processes occurring in a diode. The diode parameters and an operating frequency were selected from the condition for obtaining a maximum oscillation frequency...
This paper offers a description of single crystal growing for bismuth-antimony alloys using the technology of floating-zone refining, with surface etches compounds being detailed.
The study is based on power and frequency-response characteristics of diodes, in which of certain voltages the NDC (negative differential conductance) occurs between ohmic connections due to electron tunneling through diode's side edges and due to intervalley transfer of electrons. The ability of generation and frequency multipication using such diodes in the MM-range is shown.
The basic criteria of perspective of using of intervalley electron transfer (IET) semiconductor materials for a generation, amplifier and frequency multiplication are oscillation efficiency and frequency operation range. The most effective operation mode is idealized LSE mode. Thus, it is possible to be able to estimate perspective of one or another semiconductor compound for fabrication IET - devise...
A number of semiconductor devices possess negative differential conductivity(NDC). In basis their works are tunneling, resonance tunneling, electrons capture on recombination centers or transfer of electrons in the overhead on energy of valley of conductivity zone and other. The authors propose here a novel diode, in which the NDC arise between ohmic contacts due to tunneling or resonance tunneling...
The oscillation efficiency of nitride diodes operating in limitation of accumulation of the space charge (LSA) in the wide taraherz frequency range has been investigated. The maximal frequencies correspond to the existing regions of negative differential conductivity (NDP) 600 GHz for InN 800 GHz for GaN and 1200 GHz for AlN are showed.
The diodes, in which negative differential conductivity (NDC) arises at certain stresses between ohmic contacts owe to tunneling or resonant tunneling of electrons through lateral borders of the diode, are considered, and their current-voltage characteristics are determined in the present paper.
The question of growth of perfect bismuth-antimony monocrystals with uniform distribution of Sb atoms throughout the crystal by the method of floating-zone refining is considered.
Two-level, displaced-maxwellian approach model of transfer electron effect in variband semiconductors has been created. With the help of the model research of TED based on variband semiconductor compounds Inx(z)Ga1−x(z)As, Alx(z)As, InP1−x(z)Ga1−x(z)Asx(z) has been done. Composition of the semiconductors x(z) in the active zone of TED depends linearly on the coordinate. It has been proved...
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