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This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices,...
A novel lateral super-junction power FINFET (SJ-FINFET) structure suitable for integration is presented to address the challenges associated with sub-100V applications. The proposed lateral SJ-FINFET structure is compatible with advanced SOI-CMOS and FINFET fabrication technologies. It employs a 3D corrugated MOS channel and alternating n/p drift region pillars to achieve a 30% reduction in specific...
In this paper, a novel trench power MOSFET with improved avalanche capability and specific on-resistance is presented. The novel device is fabricated along with the conventional trench power MOSFET for comparison. The avalanche current of the novel device is improved by 30% because the n+-source/p-body junction in the structure is minimized. Moreover, the specific on-resistance is reduced by 32% due...
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