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We have investigated terahertz (THz) generation from InGaN/GaN multiple quantum wells (QWs). For the laser pump power of 400 mW at 391 nm, the highest THz output power is nearly 1 μW. Assuming that the output power quadratically scales up with the interaction length, such an output power corresponds to a normalized output power of 1.7nW/nm2. The normalized output power measured on the InGaN/GaN multiple...
Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.
In this paper, the current injection efficiency (??injection) and internal quantum efficiency (??IQE) of InGaN QWs are investigated. Due to the existence of the polarization field in the InGaN QW, the band bending of the band edge potential leads to thermionic carrier escape from InGaN QW GaN barrier regions. The ??injection is the fraction of injected current that recombines in the QW active region,...
In this work, we present simulation and experimental studies of staggered InGaN QWs LEDs emitting at 480nm and 525-nm spectral regimes. The staggered InGaN QW design can be realized by employing combination of high In-content and low In-content InGaN layers to form the QW with significantly improved electron-hole wave function overlap. This leads to the enhancement in radiative efficiency of nitride...
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