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In this paper, the current injection efficiency (??injection) and internal quantum efficiency (??IQE) of InGaN QWs are investigated. Due to the existence of the polarization field in the InGaN QW, the band bending of the band edge potential leads to thermionic carrier escape from InGaN QW GaN barrier regions. The ??injection is the fraction of injected current that recombines in the QW active region,...
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