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We present recent advances in the generation of highly intense multiterahertz transients and their application to nonlinear spectroscopy of bulk semiconductors. An optimized scheme of parametric amplification results in broadband single- or few-cycle terahertz transients with peak electric fields up to 10 or 25 MV/cm, respectively. Time-resolved four-wave mixing terahertz spectroscopy of InSb far...
Broadband parametric amplification of 1.3-µm pulses in GaSe crystals provides intense single-cycle idler transients covering the 1–60 THz window with peak amplitudes above 10 MV/cm. Electro-optic sampling directly monitors the field of the phase-stable waveforms.
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