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The anisotropic properties of the Sn crystal play an important role in the electromigration (EM) reliability of Sn-based Pb-free solder interconnects in flip chip packages. This study investigates the effect of the Sn grain structure on the EM lifetime and statistics of Pb-free solder bumps. The electron backscattering diffraction (EBSD) technique was applied in this study to characterize the Sn grain...
In this paper, temperature-dependent thermal stresses in Cu TSVs are measured by combining the bending beam experiment with a finite element analysis (FEA). The bending beam technique measures the averaged bending curvature induced by the thermal expansion of a periodic annular Cu TSV array. The structural complexity of the blind annular TSV necessitated the use of FEA to derive the TSV-induced thermal...
The reliability of Cu/low k interconnect structures using Cu pillar bumps was investigated in this paper. First the characteristics related to electromigration (EM) of Cu pillars with Sn-Ag tips were studied and compared with full Pb-free Sn-Ag solder bumps. The simulation results revealed a significant reduction in the current crowding when Sn-Ag C4 solder was replaced by Cu pillar structures. As...
In this paper we investigated the interfacial delamination of through silicon via (TSV) structures under thermal cycling or processing. First finite element analysis (FEA) was used to evaluate the thermal stresses and the driving force of TSV delamaination. Then, the modeling results were validated by analytical solutions of the crack driving force deduced for a long crack at the steady state. Both...
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