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We have fabricated a CMOS vacuum magnetic sensor that exploits the deflection of an electron beam produced by field emission by a perpendicular magnetic field. The device is planar and fabricated by conventional lithography and etching processes. An extremely high magnetic field sensitivity of 4times103%/T is reported.
In the past decades, there is a considerable interest in the sensor community to move from micron to nano-devices, typically scaling of resonators such as cantilever beams. The scaled beams give advantages in faster response and higher sensitivity; however the detection of their resonance becomes challenging as dimensions scale down. In our work, we demonstrate the use of field emission characteristics...
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