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This paper presents a new low-cost, CMOS-compatible and robust wafer-level encapsulation technique developed using a stress-optimised PECVD SiC as the capping and sealing material, imparting harsh environment capability. This technique has been applied for the fabrication and encapsulation of a wide variety of surface- and thin-SOI microstructures that included microcavities, RF switches and various...
This paper reports the first pull-in time accelerometer made by post-processing surface micromachining technology. As the pull-in time is a semi digital signal, the output of the device can be measured with a fully digital circuit. The sensitivity and nonlinearity are comparable with the differential capacitive sensing devices. Aluminium was used for the mechanical layer, while phosphosilicate glass...
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