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This paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼ 1100V. Temperature characterization of Capacitance voltage characteristics...
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