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Wide band gap semiconductor SiC with their superior electrical properties are likely candidates to replace conventional low band gap materials like Si and GaAs in the near future for RF power applications. The authors have therefore studied this prospects through advanced computer simulation experiment on hexagonal (both 4 H and 6 H) SiC based double drift region IMPATT diodes. The study indicates...
Results of computer aided studies on mm-wave performance of GaAs (narrow band gap, Eg= 1.42 eV) and zinc-blende (ZB) phase GaN (wide band gap, Eg= 3.2 eV) double drift IMPATT diode for frequencies of operation in the range of 35 to 140 GHz indicate avalanche breakdown at very high electric field for ZB-GaN diode with exhibition of seven times higher breakdown voltage for ZB-GaN (331 V) compared to...
The paper presents the simulation study of a low cost switching table based DTC scheme to be implemented using discrete electronic component. The simulation is carried out to control the torque and speed of 3-phase induction motor in forward and reverse motoring operation, allowing higher PWM switching frequency of the inverter. The simulation study is performed using SIMULINK environment of MATLAB...
Summary form only given. The mm-wave as well as noise properties of IMPATT diode at D-band are efficiently determined with 4H-SiC and GaN as base materials. The results show that SiC IMPATT diode is capable of generating high microwave power at 140 GHz as compared to GaN IMPATT diode designed for the same frequency of operation. It is also observed that GaN exhibits better noise behaviour than SiC...
Low-high-low and High-low doping profile IMPATT DDDs have been designed and optimized, analyzed for 15 GHz, 35 GHz, 60 and 94 GHz operations following computer simulation experiment for DC, high frequency and avalanche noise analysis. The results showed that efficiency as high as 28.7% is achievable for the 15 GHz DDD for low-hi-low doped junction and 26.8% for high-low junction, which is the optimum...
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