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Due to their ceramic-like thermal/chemical stability GaN-based HEMTs are expected to be of high robustness and may also be a prime candidate for reliable high temperature operation. In gas sensing AlGaN/GaN heterostructures have been investigated up to 800??C. In a simple proof-of-concept experiment InAlN/GaN HEMTs have been operated at 1000??C for a short period of time in vacuum. However in respect...
In this paper, the properties of 5 nm barrier HEMT devices has been investigated in a temperature ramping experiment as used for AlGaN/GaN devices. The pinch-off voltage remains identical and the Schottky diode leakage only marginally increased. The ohmic contacts, which have been alloyed at 850 degC by RTA show also exceptional stability. The initial alloying cycle still kept the alloy front just...
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