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The InAlN/GaN heterojunction is a new alternative to the common AlGaN/GaN configuration with high sheet charge density and high thermal stability, promising very high power and temperature performance as well as robustness. The status, focussing on the lattice matched materials configuration is reviewed.
The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed. With 0.25 mum gate length the highest maximum output current density of more than 2 A/mm at room temperature and more than 3 A/mm at 77 K have been obtained even with sapphire substrates. Cut-off frequencies were fT = 50 GHz and fMAX = 60 GHz for 0.15 mum gate length without T-gate. Pulsed measurements...
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