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Multi-step processing of Cu(In,Ga)Se2, incorporating electrodeposition (ED) of single-phase precursors coupled with physical vapor deposition (PVD) to tune film composition, is described. ED conditions for a range of precursors, including CuSe, Cu/In alloys and bi-layers, In2Se3, and Cu metal, were optimized. Precursors were processed by PVD at ~500??C for 45-60 minutes. Resultant Cu(In,Ga)Se2 devices...
Passive cooling systems use simple low-cost techniques to provide summer comfort in warm climates and can also be used to keep food, liquids and other materials at temperatures below ambient. Radiative cooling devices require a convective shield that should reject solar radiation but be transparent to mid-IR thermal radiation. In this paper, chemical solution deposition of thin semiconductor films...
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