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The DC saddle field glow discharge method was used to deposit a-Si:H in order to passivate c-Si surfaces. The process temperature and the thickness of the a-Si:H films were varied. In addition subsequent annealing of the samples were studied. Passivation quality of the a-Si:H overlayers were studied by measuring the effective minority carrier lifetime in the heterostructures as a function of the minority...
We present here the application of CPM for the examination of defect density in the doped amorphous silicon layer and the amorphous-crystalline silicon interface of silicon heterojunction photovoltaic devices. CPM derived absorption and internal quantum efficiency (QE) spectra of the devices are measured. A simple model is proposed wherein the amorphous layer and the interface constitute one absorbing...
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